Description

• ESD: No
• Configuration: Dual
• Type: N
• VDSS(V): 100
• ID(A): 50
• PD(W): 65.7
• VGS(V): ±20
• Tj(℃）: 150
• Vth_Typ(V): 2.7
• Rdson@VGS10V_TYP(mΩ): 10.4
• Rdson@VGS10V_Max(mΩ): 14
• Rdson@VGS4.5V_TYP(mΩ): /
• Rdson@VGS4.5V_Max(mΩ): /
• Rdson@VGS2.5V_TYP(mΩ): /
• Rdson@VGS2.5V_Max(mΩ): /
• Ciss_Typ(pF): 1218
• Coss_Typ(pF): 334
• Crss_Typ(pF): 10.6
• Qg_Typ(nC): 25.7
• Grade: Industrial
• Yangjie YJGD014G10H All MOSFET in PDFN5060-8L-Dual package
• Applications: MOSFET
• Product Line: MOSFET
• ESD: No
• Configuration: Dual
• Type: N
• VDSS(V): 100
• ID(A): 50
• PD(W): 65.7
• VGS(V): ±20
• Tj(℃）: 150
• Vth_Typ(V): 2.7
• Rdson@VGS10V_TYP(mΩ): 10.4
• Rdson@VGS10V_Max(mΩ): 14
• Rdson@VGS4.5V_TYP(mΩ): /
• Rdson@VGS4.5V_Max(mΩ): /
• Rdson@VGS2.5V_TYP(mΩ): /
• Rdson@VGS2.5V_Max(mΩ): /
• Ciss_Typ(pF): 1218
• Coss_Typ(pF): 334
• Crss_Typ(pF): 10.6
• Qg_Typ(nC): 25.7
• Grade: Industrial
• Status: Active