The IEGT employs a trench-gate structure, forming a hole accumulation layer on the emitter side. When the device is turned on, holes from the collector are confined beneath the gate; to maintain charge neutrality, a large number of free electrons are injected into the drift layer from the emitter side, creating a high-concentration carrier aggregation effect. This “injection-enhanced” mechanism significantly reduces the resistance of the drift region, enabling the IEGT to achieve a lower on-state voltage drop (VCE(sat)) while maintaining a high breakdown voltage (typically 1,200 V or higher).

      PMI (plastic module) and PPI (press-in) packages are widely used in high-voltage direct current (HVDC) transmission, offshore wind power grid integration, large industrial motor drives, and static synchronous compensators.