Description

• BlockingVoltage(V): 1200
• CurrentRating(A): 60
• Generation: Gen5
• ForwardVoltageVF（V）: 1.35
• ReverseleakagecurrentIR（uA）: 1
• ForwardsurgecurrentIFSM(A): 640
• TotalCapacitiveChargeQC(nC): 360
• TotalPowerDissipationPTOT(W): 535
• ThermalresistanceRthJ-C(°C/W): 0.28
• Yangjie YJD112060NCTYG5 SiC Schottky Diode in TO-247AB package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 1200
• CurrentRating(A): 60
• Generation: Gen5
• ForwardVoltageVF（V）: 1.35
• ReverseleakagecurrentIR（uA）: 1
• ForwardsurgecurrentIFSM(A): 640
• TotalCapacitiveChargeQC(nC): 360
• TotalPowerDissipationPTOT(W): 535
• ThermalresistanceRthJ-C(°C/W): 0.28