Description

• BlockingVoltage(V): 1200
• CurrentRating(A): 20
• Generation: Gen4
• ForwardVoltageVF（V）: 1.36
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 160
• TotalCapacitiveChargeQC(nC): 118
• TotalPowerDissipationPTOT(W): 172
• ThermalresistanceRthJ-C(°C/W): 0.87
• Yangjie YJD112020BYG4 SiC Schottky Diode in TO-263/D2PAK package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 1200
• CurrentRating(A): 20
• Generation: Gen4
• ForwardVoltageVF（V）: 1.36
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 160
• TotalCapacitiveChargeQC(nC): 118
• TotalPowerDissipationPTOT(W): 172
• ThermalresistanceRthJ-C(°C/W): 0.87