Description

• BlockingVoltage(V): 650
• CurrentRating(A): 30
• Generation: Gen4
• ForwardVoltageVF（V）: 1.38
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 190
• TotalCapacitiveChargeQC(nC): 92
• TotalPowerDissipationPTOT(W): 176
• ThermalresistanceRthJ-C(°C/W): 0.85
• Yangjie YJD106530BYG4 SiC Schottky Diode in TO-263/D2PAK package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 650
• CurrentRating(A): 30
• Generation: Gen4
• ForwardVoltageVF（V）: 1.38
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 190
• TotalCapacitiveChargeQC(nC): 92
• TotalPowerDissipationPTOT(W): 176
• ThermalresistanceRthJ-C(°C/W): 0.85