Description

• BlockingVoltage(V): 650
• CurrentRating(A): 4
• Generation: Gen4
• ForwardVoltageVF（V）: 1.45
• ReverseleakagecurrentIR（uA）: 0.1
• ForwardsurgecurrentIFSM(A): 28
• TotalCapacitiveChargeQC(nC): 11
• TotalPowerDissipationPTOT(W): 57
• ThermalresistanceRthJ-C(°C/W): 2.6
• Yangjie YJD106504DXYG4 SiC Schottky Diode in TO-252/DPAK package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 650
• CurrentRating(A): 4
• Generation: Gen4
• ForwardVoltageVF（V）: 1.45
• ReverseleakagecurrentIR（uA）: 0.1
• ForwardsurgecurrentIFSM(A): 28
• TotalCapacitiveChargeQC(nC): 11
• TotalPowerDissipationPTOT(W): 57
• ThermalresistanceRthJ-C(°C/W): 2.6