Description

• BlockingVoltage(V): 1200
• CurrentRating(A): 2
• Generation: Gen4
• ForwardVoltageVF（V）: 1.46
• ReverseleakagecurrentIR（uA）: 0.1
• ForwardsurgecurrentIFSM(A): 16
• TotalCapacitiveChargeQC(nC): 10.8
• TotalPowerDissipationPTOT(W): 5.4
• ThermalresistanceRthJ-C(°C/W): 27.4
• Yangjie A122 SiC Schottky Diode in SMA package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 1200
• CurrentRating(A): 2
• Generation: Gen4
• ForwardVoltageVF（V）: 1.46
• ReverseleakagecurrentIR（uA）: 0.1
• ForwardsurgecurrentIFSM(A): 16
• TotalCapacitiveChargeQC(nC): 10.8
• TotalPowerDissipationPTOT(W): 5.4
• ThermalresistanceRthJ-C(°C/W): 27.4