Description

• BlockingVoltage(V): 1200
• CurrentRating(A): 30
• Generation: Gen3
• ForwardVoltageVF（V）: 1.35
• ReverseleakagecurrentIR（uA）: 3
• ForwardsurgecurrentIFSM(A): 160
• TotalCapacitiveChargeQC(nC): 96
• TotalPowerDissipationPTOT(W): 428
• ThermalresistanceRthJ-C(°C/W): 0.35
• Yangjie YJD112030NCTQG3 SiC Schottky Diode in TO-247AB package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 1200
• CurrentRating(A): 30
• Generation: Gen3
• ForwardVoltageVF（V）: 1.35
• ReverseleakagecurrentIR（uA）: 3
• ForwardsurgecurrentIFSM(A): 160
• TotalCapacitiveChargeQC(nC): 96
• TotalPowerDissipationPTOT(W): 428
• ThermalresistanceRthJ-C(°C/W): 0.35