Description

• BlockingVoltage(V): 1200
• CurrentRating(A): 10
• Generation: Gen2
• ForwardVoltageVF（V）: 1.42
• ReverseleakagecurrentIR（uA）: 1.3
• ForwardsurgecurrentIFSM(A): 85
• TotalCapacitiveChargeQC(nC): 53
• TotalPowerDissipationPTOT(W): 189
• ThermalresistanceRthJ-C(°C/W): 0.79
• Yangjie YJD112010DQG2 SiC Schottky Diode in TO-252/DPAK package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 1200
• CurrentRating(A): 10
• Generation: Gen2
• ForwardVoltageVF（V）: 1.42
• ReverseleakagecurrentIR（uA）: 1.3
• ForwardsurgecurrentIFSM(A): 85
• TotalCapacitiveChargeQC(nC): 53
• TotalPowerDissipationPTOT(W): 189
• ThermalresistanceRthJ-C(°C/W): 0.79