Description

• BlockingVoltage(V): 650
• CurrentRating(A): 8
• Generation: Gen4
• ForwardVoltageVF（V）: 1.28
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 75
• TotalCapacitiveChargeQC(nC): 31
• TotalPowerDissipationPTOT(W): 110
• ThermalresistanceRthJ-C(°C/W): 1.36
• Yangjie YJD106508PYG4 SiC Schottky Diode in TO-220AC package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 650
• CurrentRating(A): 8
• Generation: Gen4
• ForwardVoltageVF（V）: 1.28
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 75
• TotalCapacitiveChargeQC(nC): 31
• TotalPowerDissipationPTOT(W): 110
• ThermalresistanceRthJ-C(°C/W): 1.36