Description

• BlockingVoltage(V): 650
• CurrentRating(A): 6
• Generation: Gen5
• ForwardVoltageVF（V）: 1.3
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 65
• TotalCapacitiveChargeQC(nC): 21.5
• TotalPowerDissipationPTOT(W): 75
• ThermalresistanceRthJ-C(°C/W): 2
• Yangjie YJD106506BYG5 SiC Schottky Diode in TO-263/D2PAK package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 650
• CurrentRating(A): 6
• Generation: Gen5
• ForwardVoltageVF（V）: 1.3
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 65
• TotalCapacitiveChargeQC(nC): 21.5
• TotalPowerDissipationPTOT(W): 75
• ThermalresistanceRthJ-C(°C/W): 2