Description

• BlockingVoltage(V): 1200
• CurrentRating(A): 21
• Generation: Gen3
• Rdson(mΩ)@25℃: 115
• GateChargeTotalQg（nC）: 42
• OutputCapacitanceCoss(pF): 45
• TotalPowerDissipationPTOT(W): 104
• ThermalresistanceRthJ-C(°C/W): 1.44
• MaximumJunctionTemperature（℃）: 175
• Yangjie YJD2120120B7YG3 SiC MOSFET Single Transistor in TO-263-7L package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 1200
• CurrentRating(A): 21
• Generation: Gen3
• Rdson(mΩ)@25℃: 115
• GateChargeTotalQg（nC）: 42
• OutputCapacitanceCoss(pF): 45
• TotalPowerDissipationPTOT(W): 104
• ThermalresistanceRthJ-C(°C/W): 1.44
• MaximumJunctionTemperature（℃）: 175