Description

• BlockingVoltage(V): 1200
• CurrentRating(A): 21
• Generation: Gen3
• Rdson(mΩ)@25℃: 120
• GateChargeTotalQg（nC）: 42
• OutputCapacitanceCoss(pF): 45
• TotalPowerDissipationPTOT(W): 161
• ThermalresistanceRthJ-C(°C/W): 0.93
• MaximumJunctionTemperature（℃）: 175
• Yangjie YJD2120120NCTYG3 SiC MOSFET Single Transistor in TO-247AB package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 1200
• CurrentRating(A): 21
• Generation: Gen3
• Rdson(mΩ)@25℃: 120
• GateChargeTotalQg（nC）: 42
• OutputCapacitanceCoss(pF): 45
• TotalPowerDissipationPTOT(W): 161
• ThermalresistanceRthJ-C(°C/W): 0.93
• MaximumJunctionTemperature（℃）: 175