Description

• BlockingVoltage(V): 650
• CurrentRating(A): 1
• Generation: Gen4
• ForwardVoltageVF（V）: 1.13
• ReverseleakagecurrentIR（uA）: 0.02
• ForwardsurgecurrentIFSM(A): 18
• TotalCapacitiveChargeQC(nC): 8.3
• TotalPowerDissipationPTOT(W): 16.4
• ThermalresistanceRthJ-C(°C/W): 9.12
• Yangjie A1Q Automotive SiC Schottky Diode in SMA package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 650
• CurrentRating(A): 1
• Generation: Gen4
• ForwardVoltageVF（V）: 1.13
• ReverseleakagecurrentIR（uA）: 0.02
• ForwardsurgecurrentIFSM(A): 18
• TotalCapacitiveChargeQC(nC): 8.3
• TotalPowerDissipationPTOT(W): 16.4
• ThermalresistanceRthJ-C(°C/W): 9.12