Description

• BlockingVoltage(V): 1200
• CurrentRating(A): 8
• Generation: Gen3
• ForwardVoltageVF（V）: 1.46
• ReverseleakagecurrentIR（uA）: 1
• ForwardsurgecurrentIFSM(A): 95
• TotalCapacitiveChargeQC(nC): 37
• TotalPowerDissipationPTOT(W): 126
• ThermalresistanceRthJ-C(°C/W): 1.19
• Yangjie YJD112008DQG3Q Automotive SiC Schottky Diode in TO-252/DPAK package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 1200
• CurrentRating(A): 8
• Generation: Gen3
• ForwardVoltageVF（V）: 1.46
• ReverseleakagecurrentIR（uA）: 1
• ForwardsurgecurrentIFSM(A): 95
• TotalCapacitiveChargeQC(nC): 37
• TotalPowerDissipationPTOT(W): 126
• ThermalresistanceRthJ-C(°C/W): 1.19