Description

• BlockingVoltage(V): 1200
• CurrentRating(A): 2
• Generation: Gen4
• ForwardVoltageVF（V）: 1.45
• ReverseleakagecurrentIR（uA）: 0.1
• ForwardsurgecurrentIFSM(A): 20
• TotalCapacitiveChargeQC(nC): 10.2
• TotalPowerDissipationPTOT(W): 42
• ThermalresistanceRthJ-C(°C/W): 3.57
• Yangjie YJD112002DYG4Q Automotive SiC Schottky Diode in TO-252/DPAK package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 1200
• CurrentRating(A): 2
• Generation: Gen4
• ForwardVoltageVF（V）: 1.45
• ReverseleakagecurrentIR（uA）: 0.1
• ForwardsurgecurrentIFSM(A): 20
• TotalCapacitiveChargeQC(nC): 10.2
• TotalPowerDissipationPTOT(W): 42
• ThermalresistanceRthJ-C(°C/W): 3.57