Description

• BlockingVoltage(V): 650
• CurrentRating(A): 10
• Generation: Gen4
• ForwardVoltageVF（V）: 1.35
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 75
• TotalCapacitiveChargeQC(nC): 31
• TotalPowerDissipationPTOT(W): 119
• ThermalresistanceRthJ-C(°C/W): 1.26
• Yangjie YJD106508DXYG4Q Automotive SiC Schottky Diode in TO-252/DPAK package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 650
• CurrentRating(A): 10
• Generation: Gen4
• ForwardVoltageVF（V）: 1.35
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 75
• TotalCapacitiveChargeQC(nC): 31
• TotalPowerDissipationPTOT(W): 119
• ThermalresistanceRthJ-C(°C/W): 1.26