Description

• BlockingVoltage(V): 650
• CurrentRating(A): 6
• Generation: Gen2
• ForwardVoltageVF（V）: 1.31
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 65
• TotalCapacitiveChargeQC(nC): 25
• TotalPowerDissipationPTOT(W): 100
• ThermalresistanceRthJ-C(°C/W): 1.49
• Yangjie YJD106506DQG2Q Automotive SiC Schottky Diode in TO-252/DPAK package
• Applications: SiC
• Product Line: SiC
• BlockingVoltage(V): 650
• CurrentRating(A): 6
• Generation: Gen2
• ForwardVoltageVF（V）: 1.31
• ReverseleakagecurrentIR（uA）: 0.5
• ForwardsurgecurrentIFSM(A): 65
• TotalCapacitiveChargeQC(nC): 25
• TotalPowerDissipationPTOT(W): 100
• ThermalresistanceRthJ-C(°C/W): 1.49