Description

• Applications: Low Inductance IGBT Module MIRA-IRB12LA-50N successful used in AC motor drives, invertors and power supplies.
• VCES [V]: 1200
• ICnom [A]: 50
• Chip technology: Trench-FS
• Configuration: Inverter, rectifier, brake chopper
• Qualification: Industrial
• Housing
• (width/length) [mm]: MIRA (62/122)
• Сonfirmation of production (719 Decree) : Entered into the register
• Description: Low Inductance IGBT Module MIRA-IRB12LA-50N with 17 mm Height Housing. IGBT module with blocking voltage 1200V and current 50A. IGBT MIRA-IRB12LA-50N has copper baseplate, improved thermal cycling and integrated temperature sensor.