Description

• Application: Gate drive for IGBT / power MOSFET modules in inverters
• Withstandvoltage(V): 620
• CurrentSource(A): 0.25
• CurrentSink(A): 0.40
• Current polarity detection: －
• Back EMF detection: Yes
• Protection function OCP(*1): Yes
• VCC LVD(*2): Yes
• Top armlow-voltage: Yes
• PWM signal inputs: 6
• RoHSstatus: Compliant
• MSLRating(*3): 3
• System Configuration