Description

• -IGBT (Insulated Gate Bipolar Transistor) modules are indispensable components for the frequency conversion of all industrial equipment. Since their commercialization in the 1990s, they have been evolving towards higher current and voltage ratings. Furthermore, their chip structure has transitioned from a planar gate structure to a trench gate structure. With CSTBT (an IGBT developed by our company utilizing carrier storage effects), the requirements for low loss and miniaturization in industrial equipment have been met. Compared to the traditional S series (sixth-generation IGBT), the T/T1 series offers lower power loss and a more compact size. Additionally, besides the standard (std) type with a traditional shape, the NX type and LV100 type have also been added.
• – Significantly reducing power consumption helps improve the output and efficiency of the inverter
-Low inductance packaging that can maximize the performance of SiC
– High design reliability, suitable for application in the rail transit field, and conducive to enhancing the reliability of the inverter system