Description

• Test Voltage: 10~1700V/10~6500V
• Test Current (Peak): 20~6000A(10000A,10μs)
• Stray Inductance: <10nH(Customizable,Test fixture inductance only) • Gate Resistance: Manual adjustment0~100Ω(OptionalAdjust) • GateVoltageRange: Negative:-15V-0V,Positive:0V~+25V • GateVoltageDegree: ±0.1V • SignalStyle: Single/Double Pulse, Multi Pulse • SignalWideDegree: 0.1μs~1000μs,PartRate0.02μs,Degree±0.1μs • LoadInductance: 10μH/50μH.../1000μH,8Adjustable, Degree±59;OptionalConfigured • Communication: LAN/USB • FullProtection: Over CurrentOverProtection, Protection, High Voltage, , Etc. • Description: QTJT-D IsForIGBT/SiCCanTestProfessional, Capable ofIGBT/SiCDeviceDiscrete Device, Module, IPM/Power ModuleNumberTest, SystemMainByMain(ControlModule, High VoltagePower Supply, AdjustableLoadInductance, Module, ModuleEtc.(, DeviceAndHead, TestFixtureEtc.GroupForm, Capable ofMultiModuleParallelTest, DualTest, RBSOAFullTest, Class/ClassShort CircuitTestEtc.