Description

• Supply Voltage: 220V±10%(Single Phase +PE), 50Hz±10%, 10kW
• Test Object: SiC/IGBT Wafer, Chip, Discrete Device, Module
• Test Items: Kelvin, ISO, SW, SC, Qg, DC, RgCg , UISEtc.
• ACTestMaxVoltageCurrent: 1500V, Multi Pulse 4000A, Short circuit 12000A@10us
• DCTestMaxVoltageCurrent: 2000V, 2000A
• UISTestMaxVoltageCurrent: 3000V, 200A
• RgCgTest Voltage: Vds, 1500Vmax, Vgs , ±40V
• ACTestInductance: ＜15nH, NotDeviceAndsocket
• ACTestOver Current Protection: ＜2us
• TestEfficiencyRate: UPH>200, BodyTest ObjectAndTest Items
• Description: ForIGBT, SiCEtc.PowerHalfBodyDeviceProvidesCompletePowerTest, CanEfficientImplementsFromWaferLevelToMostISO, DC, ACEtc.CompleteTest, ImplementsFullAutomatedTestOver, AndConfiguredRichTestInterfaceFunctionModule, MeetsNotDeviceTestTest