1. Special Semiconductor Device Portfolio
R&D Electronics supplies TECHSEM special semiconductor devices including pulse thyristors, pulse diodes, and reversely switching dynistors (RSD) to international pulsed power markets.
Device Categories
◆ Pulse thyristors for high power switching; Pulse diodes for laser pulse generation; RSD for microsecond precision switching; Customized design for special applications; International quality standards; One year manufacturer warranty
International Applications
◆ Laser power supplies worldwide; Electromagnetic forming systems; Pulsed magnetic field research; Capacitor discharge circuits; Pulse generator systems; Scientific research equipment
2. Pulse Thyristor Capabilities
TECHSEM pulse thyristors handle current rise up to 3000A per microsecond with reverse voltage up to 6500V and pulse peak current up to 330kA for international pulsed power applications.
Performance Range
◆ Reverse voltage up to 6500V; Pulse peak current up to 330kA; Current rise di/dt up to 3000A per microsecond; Multiple voltage platforms; KT ceramic housing series; Pressure contact technology
Voltage Platform Options
◆ 4200V platform with H100KMJ; 4500V platform with H125KMM; 5500V platform with H125KMN and H150KMN; 6500V platform with KMR series; Wide range for different applications; Selection based on requirements
Specifications Table
3. Pulse Diode High Performance
TECHSEM pulse diodes offer reverse voltage up to 8500V and pulse peak current up to 120kA, distributed internationally by R&D Electronics for laser and pulsed power applications.
Pulse Diode Specifications
◆ Reverse voltage up to 8500V; Pulse peak current up to 120kA; ZT ceramic housing; Low reverse recovery charge; Fast recovery characteristics; Optimized for pulse duty cycle
Recovery Performance
◆ ZMR series at 6500V; ZMU series at 8500V; Recovery charge from 3500 to 20000 microcoulombs; Soft recovery characteristics; Reduced EMI; Higher frequency operation
Specifications Table
4. RSD Device Innovation
RSD (Reversely Switching Dynistors) combines the voltage resistance advantage of a thyristor with the switching speed of a transistor, achieving microsecond level precision switching for international research applications.
RSD Performance
◆ High reverse voltage up to 3000V; Very high peak current up to 250kA; High di/dt up to 60kA per microsecond; High dv/dt up to 1kV per microsecond; Microsecond precision switching; Combined thyristor transistor advantages
International Research Applications
◆ Particle accelerator systems; Fusion research equipment; High energy physics experiments; Electromagnetic launch systems; Pulse power research; Advanced scientific instruments
Specifications Table
Frequently Asked Questions
1：What special devices does R&D Electronics supply for international markets?
R&D Electronics supplies TECHSEM pulse thyristors (up to 6500V, 330kA), pulse diodes (up to 8500V, 120kA), and RSD devices (up to 3000V, 250kA) for international pulsed power and research applications.
2：What is the maximum di/dt capability of TECHSEM pulse thyristors?
TECHSEM pulse thyristors can handle current rise (di/dt) up to 3000A per microsecond, with reverse voltage up to 6500V and pulse peak current up to 330kA for demanding pulsed power applications.
3：What makes RSD devices unique for international research applications?
RSD devices combine the voltage resistance advantage of a thyristor with the switching speed of a transistor, achieving microsecond level precision switching with di/dt up to 60kA per microsecond and dv/dt up to 1kV per microsecond.
4：What is the highest voltage pulse diode available from R&D Electronics?
The H150ZMU at 8500V with 100kA pulse peak current and 14000 microcoulomb reverse recovery charge is the highest voltage pulse diode available from R&D Electronics.
