Description

• Parameters: 110A55V
• Description: SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. It can be widely used in electronic ballast, low-power SWPS. Download the latest English version SVD3205T(F)(S) SVD3205
• Features: 110A,55V, R DS(on)(typ.) =7.5m W @V GS =10V Low gate charge Low Crss
• Applications: Energy
• Voltage: 55V
• Current: 110A