Description

• Topology: Half-Bridge
• Voltage: 1200 V
• Current: 110 A
• R(DS)on: 13 mOhm
• Chip Technology: SiC MOSFET
• Status: Planned
• Pack Quantity: 100
• Isolation: Base isolation: Al2O3
• Description: Half-Bridge: Temperature sensor; Half Bridge
• Description: SiC MOSFET – Fast intrinsic diode with low reverse recovery; High blocking voltage with low on-resistance; High speed switching with low capacitance
• PCB Connection: 4 towers
• Dimensions: 62.8 mm x 34.8 mm
• Height: 12 mm
• Pin Type: Press-fit pin