Description

• Topology: H-Bridge
• Voltage: 1200 V
• Current: 48 A
• R(DS)on: 30 mOhm
• Chip Technology: SiC MOSFET
• Status: Samples available
• Pack Quantity: 135
• Isolation: Base isolation: Al2O3
• Description: H-Bridge: Dual halfbridge; Integrated DC capacitor; Kelvin Emitter for improved switching performance; Open Emitter configuration; Temperature sensor
• Description: SiC MOSFET – High Blocking Voltage with low drain source on state resistance; High speed SiC-MOSFET technology; Resistant to Latch-up
• PCB Connection: 4 towers
• Dimensions: 66 mm x 32.5 mm
• Height: 12 mm
• Pin Type: Press-fit pin