Description

Application Field: Industrial, New Energies
• If/Id @ Tc=25C (A): 105
• No.: 548.0
• Product Status: active
• Rds(on) @Tj=25C typ. (mΩ): 10.5
• VRRM/VDSS (V): 1200
• Features: Low RDS(on)
• Pre-applied phase change material
• PressFIT contact technology
• Optimized intrinsic reverse diode
• Avalanche ruggedness
• Low inductance case
• Substrate for low thermal resistance
• Circuit Configuration: SiC MOSFET_3 Phase Bridge
• Chip Technology: SiC MOSFET Gen.2