These are power semiconductor devices manufactured using the third-generation semiconductor material—silicon carbide (SiC). Compared to traditional silicon materials, SiC offers three times the bandgap width, ten times the critical breakdown electric field, three times the thermal conductivity, and nearly twice the electron saturation drift velocity.

      Products include: SiC diodes, SiC MOSFETs, and SiC modules. According to industry forecasts, the SiC device market is expected to maintain a compound annual growth rate of approximately 30% over the next five years, becoming a core driver of high-efficiency development in power electronics.