Revolutionizing EV Charging with BYD Semiconductor SiC MOSFET Technology
As the adoption of electric vehicles accelerates globally, the demand for high-power, high-efficiency DC fast charging infrastructure has become paramount. BYD Semiconductor’s Silicon Carbide (SiC) MOSFET products represent a significant advancement in charging station power electronics, delivering superior performance compared to traditional silicon-based solutions.
SiC MOSFET Single Tube Products
BYD Semiconductor offers a comprehensive range of SiC MOSFET discrete devices designed for high-frequency, high-efficiency power conversion in EV charging applications. The product lineup includes:
750V SiC MOSFETs: The BSKE035S075 (750V, 35mΩ, 81A) and BSKE060S075 (750V, 60mΩ, 40A) deliver exceptional switching performance with Eon as low as 0.14mJ and Eoff as low as 0.032mJ, operating at frequencies up to 200kHz in TO-247-4L packages.
1200V SiC MOSFETs: The 1200V series includes models ranging from 20mΩ to 160mΩ on-resistance, with current ratings from 17A to 95A. The BSKE020T120 (1200V, 20mΩ, 95A) provides excellent high-power charging capability, while the BSKE080S120 (1200V, 80mΩ, 36A) offers optimized efficiency for lower-power charging modules.
These SiC MOSFETs are available in TO-247-4L, TO-247-3L, and TO-263-7L package options, providing design flexibility for various charging station architectures.
SiC MOSFET Modules for High-Power Charging
For high-power DC fast charging applications, BYD offers SiC MOSFET modules in the V-305 package format. These modules integrate multiple SiC dies in six-unit configurations, delivering exceptional power density:
The BME1040F12B34U5S-DL module (1200V, 2.8mΩ, 1040A) achieves remarkable current handling with Eon of 62mJ and Eoff of 65mJ. The BME700F12B34U5NA-N (1200V, 4.4mΩ, 700A) and BME840F12B34U5NA-N (1200V, 3.7mΩ, 840A) provide scalable solutions for 150kW to 350kW+ charging systems.
Advantages of SiC Technology in EV Charging
Reduced Switching Losses: SiC MOSFETs operate at higher frequencies (up to 200kHz) with significantly lower switching losses compared to IGBTs, enabling smaller passive components and improved power density in charging station designs.
Superior Thermal Performance: The wide bandgap properties of SiC allow operation at higher junction temperatures, reducing cooling system requirements and enabling more compact charging station designs.
Higher Efficiency: The combination of low RDS(on) and low switching losses translates to overall system efficiency improvements of 2-4% compared to silicon IGBT solutions, reducing operating costs for charging network operators.
Comprehensive Semiconductor Portfolio for Charging Infrastructure
Beyond SiC MOSFETs, BYD Semiconductor provides a full range of power semiconductors for EV charging applications. The company’s super-junction MOSFET modules (such as BMP110N65HN, 650V/105mΩ/30A) and IGBT modules complement the SiC offerings, providing solutions across different power levels and cost points. Additionally, BYD’s power IC products and intelligent power modules (IPM) enable complete charging station control circuit solutions.
Driving the EV Charging Revolution
BYD Semiconductor’s SiC MOSFET technology is positioned to accelerate the deployment of ultra-fast charging infrastructure worldwide. With over a decade of IGBT technology development experience and strategic investment in SiC technology, BYD Semiconductor brings proven automotive-grade quality and reliability to the charging infrastructure market. The company’s IDM model ensures consistent quality from chip design through module assembly, making it a trusted partner for EV charging equipment manufacturers globally.
