Description

• Topology: H-Bridge
• Voltage: 1200 V
• Current: 70 A
• R(DS)on: 16 mOhm
• Chip Technology: SiC MOSFET
• Status: Series
• Pack Quantity: 100
• Isolation: Base isolation: Al2O3
• Description: H-Bridge: Kelvin Emitter for improved switching performance; Open Emitter configuration; Temperature sensor
• Description: SiC MOSFET – High Blocking Voltage with low drain source on state resistance; High speed SiC-MOSFET technology; Resistant to Latch-up
• PCB Connection: 4 towers
• Dimensions: 62.8 mm x 34.8 mm
• Height: 12 mm
• Pin Type: Press-fit pin