Description

• Topology: H-Bridge
• Voltage: 650 V
• Current: 95 A
• R(DS)on: 10 mOhm
• Chip Technology: GaN E-Mode
• Status: Samples available
• Pack Quantity: 100
• Isolation: Base isolation: Al2O3
• Description: H-Bridge: Kelvin Emitter for improved switching performance; Integrated DC capacitor; Open Emitter configuration; Temperature sensor
• Description: GaN E-Mode – Fast and controllable fall and rise times; GaN enhancement mode power switch; Zero reverse recovery Qrr
• PCB Connection: 4 towers
• Dimensions: 82 mm x 37.4 mm
• Height: 12 mm
• Pin Type: Solder pin