Description

• Topology: Three-level FC Booster
• Voltage: 1400 V
• Current: 225 A
• R(DS)on: 6.67 mOhm
• Chip Technology: SiC MOSFET
• Status: Samples available
• Pack Quantity: 24
• Isolation: Base isolation: Al2O3
• Description: Three-level FC Booster: Kelvin Emitter for improved switching performance; Temperature sensor; Gate Resistor; MOSFET; Dual Flying Cap Booster; Auxiliary diodes for FC pre-charge (patent pending)
• Description: SiC MOSFET – Easy paralleling; Fast switching speed; Low on-resistance
• PCB Connection: 4 towers
• Dimensions: 109.6 mm x 59.7 mm
• Height: 15 mm
• Pin Type: Solder pin