Description

• Topology: Three-level FC Booster
• Voltage: 1200 V
• Current: 200 A
• Chip Technology: IGBT7 H7
• Status: Series
• Pack Quantity: 36
• Isolation: Base isolation: Al2O3
• Description: Three-level FC Booster: Auxiliary diodes for FC pre-charge (patent pending); Dual Flying Cap Booster; Kelvin Emitter for improved switching performance; Temperature sensor
• Description: IGBT7 H7 – High speed switching; Low collector emitter saturation voltage; Low turn-off losses; Optimized for hard switching topologies; Positive temperature coefficient
• PCB Connection: 4 towers
• Dimensions: 107.2 mm x 47 mm
• Height: 13 mm
• Pin Type: Press-fit pin