Description

• Topology: Three-level ANPC
• Voltage: 1200 V
• Current: 160 A
• R(DS)on: 8 mOhm
• Chip Technology: SiC MOSFET
• Status: Series
• Pack Quantity: 45
• Isolation: Base isolation: Al2O3
• Description: Three-level ANPC: Kelvin Emitter for improved switching performance; Temperature sensor; Advanced Neutral Point Clamped topology; MOSFET; IGBT
• Description: SiC MOSFET – High Blocking Voltage with low drain source on state resistance; High speed SiC-MOSFET technology; Resistant to Latch-up
• PCB Connection: no towers
• Dimensions: 81.8 mm x 61.3 mm
• Height: 12 mm
• Pin Type: Press-fit pin