Description

• Applications: Avalanche diodes are designed for general application in systems up to 500 Hz. Anode and cathode are flat bases. Polarity of the diode is marked by a polarity symbol on its housing. Operation principle of avalanche diodes is based on the effect of reversible breakdown of the p-n junction under reverse voltage. As soon as the voltage reaches certain value set by design each avalanche diode, current sharply rises while voltage remains the same. Main role of avalanche diodes is protection of power circuits from overvoltages.
• Applications: rectifiers for electrolysis and galvanization, DC power sources, uncontrolled and semicontrolled rectifier bridges.
• VRRM [V min]: 2800
• VRRM [V max]: 3600
• IFAV [A]: 630
• Tс: 114
• VFM (Tc=25°С) [V]: 1.90
• IFM (Tc=25°С) [A]: 1978
• VF(TO)/Tjmax [V]: 1.005
• rT/Tjmax [mΩ]: 0.551
• Tjmax [°С]: 150
• Rthjc [°С/W]: 0.030
• Design: disc
• Type: avalanche
• Description: DA343-630 is an avalanche diode in disc housing. It has a repetitive peak reverse voltage VRRM of 2800-3600 V and low static losses. Mean forward current IFAV is 630А. Industry standard design enables easy installation into existing equipment. Maximal junction temperature Tjmax is 150 °C. Diameter of the contact surface is 38 mm.