Description

• Type: Bi
• VRWM(V): 3.3
• VBR_Min(V): 3.65
• VBR_Max(V): /
• IPP(A): 9
• VC@IPP(V): 10
• Cj_TYP(PF): 16
• IR@VRWM(μA): 0.1
• Tj（℃）: 125
• Yangjie ESD3V3LB1 ESD Protection Diode in DFN1006-2L package
• Applications: Protection Device
• Product Line: Protection Device
• Type: Bi
• VRWM(V): 3.3
• VBR_Min(V): 3.65
• VBR_Max(V): /
• IPP(A): 9
• VC@IPP(V): 10
• Cj_TYP(PF): 16
• IR@VRWM(μA): 0.1
• Tj（℃）: 125
• Status: Active