Description

• Power MOSFET module
– In power devices demanding high-speed switching, voltage driving, and low loss, MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) excel in low current and low voltage tolerance. By utilizing a trench gate structure based on sub-micron technology, a significantly lower on-resistance (the resistance value of the region where the drain current flows between the drain and source) is achieved compared to a planar gate structure.
• -Equipped with trench gate structure MOSFET
– Use connector terminals for gate/source signal wiring
-Built-in temperature sensor