Description

Application Field: Industrial, New Energies
• If/Id @ Tc=25C (A): 1000
• No.: 61.0
• Product Status: active
• VRRM/VDSS (V): 1700
• Vf/Vce(sat) @Tj=25C typ. (V): 1.95
• Features: 10μs short circuit capability
• VCE(sat) with positive temperature coefficient
• Maximum junction temperature 175°C
• Enlarged Diode for regenerative operation
• Isolated copper baseplate using DBC technology
• Circuit Configuration: Half Bridge
• Chip Technology: Trench FS IGBT, Low Loss