Description

Application Field: New EnergyAutomotive/EVDriver
• If/Id @ Tc=25C (A): –
• No.: 102.0
• VRRM/VDSS (V): 1200V
• Vf/Vce(sat) @Tj=25C typ. (V): 2.12mΩ
• Features: Injection Molded,PinFin Baseplate
• Circuit Configuration: Half Bridge/Half Bridge
• Chip Technology: SiC