Description

Application Field: Automotive
• If/Id @ Tc=25C (A): 33
• No.: 572.0
• Product Status: new
• Rds(on) @Tj=25C typ. (mΩ): 80.0
• VRRM/VDSS (V): 1200
• Features: Low RDS(on)
• Optimized intrinsic reverse diode
• Avalanche ruggedness
• Low inductance case
• Substrate for low thermal resistance
• It is qualified for Automotive Applications and validated according to AQG 324
• Circuit Configuration: SiC MOSFET_3 Phase Bridge
• Chip Technology: SiC MOSFET Gen.1