Description

• The SiC MOSFET is integrated into the SLIMDIP package, which is designed for miniaturization
– The first product in the SLIMDIP series equipped with SiC MOSFET achieves high output and significantly reduces power loss, contributing to energy conservation in home appliances.
• -For P-side : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage protection (UV).
-For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC), Over temperature protection (OT).
-Fault signaling : Corresponding to SC fault (N-side MOSFET), UV fault (N-side supply) and OT fault.
-Temperature output : Outputting LVIC temperature by analog signal.
-Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active).