Description

• Full/hybrid silicon carbide power module
– With the increasing emphasis on energy conservation and miniaturization in power conversion systems, semiconductor material SiC, which possesses excellent material properties, is expected to further develop in the future. Hongbang Semiconductor’s first-generation SiC module was put into mass production in 2013. In order to promote further efficiency improvement and achieve miniaturization and lightweight of industrial-grade equipment, it has now been upgraded to the second generation, featuring full SiC power modules, hybrid SiC power modules, and a full SiC series.
• -Through utilization of short-circuit monitoring in the module it is possible to transfer a short-circuit detection signal to the system side
-Power reduced by 70% loss compared to the conventional Si module
-Low inductance package for maximum SiC performance