Description

• Description: ED-type phase leg IGBT module
• Voltage: 1200 V
• Current: 600 A
• Technology: Si
• Generation: i21
• Status: Production
• Feature: SISD0600ED120i21_A01 – SwissSEM IGBT power module – dual /…
• Collector-emitter voltage: 1200 V
• DC collector current: 600 A
• Max. junction operating temperature: 175 °C
• Collector emitter saturation voltage (T vj = 125°C): 1.68 V
• Turn-off energy (V CC = 600 V, I C = 600 A, R G = 1.5 Ω, V GE = ± 15 V, L s = 35 nH, inductive load, T vj = 125°C): 120 mJ
• Turn-on energy (V CC = 600 V, I C = 600 A, R G = 1.5 Ω, V GE = ± 15 V, L s = 35 nH, inductive load, T vj = 125°C): 76 mJ
• Forward voltage drop (Tvj = 125°C): 1.95 V
• Reverse recovery (V R = 600 V, I F = 600 A, dI/dt = 7700 A/µs (175°C), R G = 1.5 Ω, V GE = ± 15 V, L s = 35 nH, inductive load, T vj = 125°C): 40 mJ
• IGBT thermal resistance junction to case R th(j-c)_IGBT: 0.051 K/W
• Diode thermal resistance junction to case R th(j-c)_Diode: 0.069 K/W
• IGBT thermal resistance case to heatsink R th(c-s)_IGBT per switch: 0.032 K/W
• Diode thermal resistance case to heatsink R th(c-s)_Diode per switch: 0.036 K/W
• L x W x H: 152 x 62 x 17 mm³
• Clearance distance terminal to base: 12.5 mm
• Clearance distance terminal to terminal: 10 mm
• Surface creepage distance terminal to base: 15 mm
• Surface creepage distance terminal to terminal: 13 mm
• Mass: 350 g