Description

• Description: ED-type phase leg IGBT module
• Voltage: 1200 V
• Current: 1100 A
• Technology: Si
• Generation: i23
• Status: Production
• Note: Pin-fin baseplate; press-fit signal pin
• Feature: SISD1100ED120i23P – SwissSEM IGBT power module – dual /…
• Feature: SISD1100ED120i23P or (_A10P)
• Collector-emitter voltage: 1200 V
• DC collector current: 900 A
• Max. junction operating temperature: 175 °C
• Collector emitter saturation voltage (T vj = 125°C): 1.75 V
• Turn-off energy (V CC = 600 V, I C = 900 A, R G = 0.5 Ω, V GE = ± 15 V, L s = 35 nH, inductive load, T vj = 125°C): 122 mJ
• Turn-on energy (V CC = 600 V, I C = 900 A, R G = 0.5 Ω, V GE = ± 15 V, L s = 35 nH, inductive load, T vj = 125°C): 127.5 mJ
• Forward voltage drop (T vj = 125°C): 1.7 V
• Reverse recovery (V R = 600 V, I F = 900 A, dI/dt = 8220 A/µs, R G = 0.5 Ω, V GE = ± 15 V, L s = 35 nH, inductive load, T vj = 125°C): 70 mJ
• L x W x H: 152 x 62 x 28 mm³
• Clearance distance terminal to base: 12.5 mm
• Clearance distance terminal to terminal: 10 mm
• Surface creepage distance terminal to base: 15 mm
• Surface creepage distance terminal to terminal: 13 mm
• Mass: 450 g