Description

• Description: EP-type H-bridge IGBT power module with rectifier diode
• Voltage: 1700 V
• Current: 75 A
• Technology: Si
• Generation: i20
• Status: Production
• Feature: SISP0075EP170i20 – SwissSEM EP-type H-bridge IGBT power
• Collector-emitter voltage: 1700 V
• DC collector current: 75A
• Max. junction operating temperature: 175 °C
• Collector emitter saturation voltage (T vj = 125°C): 1.85 V
• Turn-off energy (V CC = 900 V, I C = 75 A, R G = 4.5 Ω, V GE = ± 15 V, L s = 90 nH, inductive load, T vj = 125°C): 17 mJ
• Turn-on energy (V CC = 900 V, I C = 75 A, R G_A1 = 11 Ω, R G_A2 = 9 Ω, V GE = ± 15 V, L s = 90 nH, inductive load, T vj = 125°C): 29 mJ
• Forward voltage drop (T vj = 125°C): 1.85 V
• Reverse recovery (V R = 900 V, I F = 200 A, R G_A1 = 11 Ω, R G_A2 = 9 Ω, V GE = ± 15 V, L s = 90 nH, inductive load, T vj = 125°C): 17 mJ
• Diode rectifier – Forward voltage drop (I F = 125 A, T vj = 125°C): 1.02 V
• IGBT thermal resistance junction to case R th(j-c)_IGBT: 0.240 K/W
• Diode thermal resistance junction to case R th(j-c)_Diode: 0.390 K/W
• Rectifier thermal resistance junction to case R th(j-c)_RectifierDiode: 0.280 K/W
• IGBT thermal resistance case to heatsink R th(c-s)_IGBT per switch: 0.094 K/W
• Diode thermal resistance case to heatsink R th(c-s)_Diode per switch: 0.104 K/W
• Rectifier thermal resistance case to heatsink R th(c-s)_Rectifier: 0.159 K/W
• L x W x H: 122 x 62.5 x 17 mm³
• Clearance distance terminal to base: 10 mm
• Clearance distance terminal to terminal: 10 mm
• Surface creepage distance terminal to base: 7.5 mm
• Surface creepage distance terminal to terminal: 10 mm
• Mass: 300 g