Description

• Parameters: 47A600V
• Description: STSP60R069P7S1 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. Download the latest English version STSP60R069P7S1 STSP60R069P7S1 Datasheet_1.0
• Features: 47A,600V, R DS(on)(typ.) =55m W @V GS =10V New revolutionary high voltage technology Ultra low gate charge
• Applications: General Purpose
• Voltage: 600V
• Current: 47A