Description

• Parameters: 1A500V
• Description: SVF1N50B is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
• Features: 1A,500V, R DS(on)(typ.) =8 W @VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
• Applications: Energy, Motor Drive
• Voltage: 500V
• Current: 1A