Description

• Parameters: 4A1500V
• Description: SVF4N150PF(P7)(F)(S) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in power supplies. Download the latest English version
• Features: 4A,1500V, R DS(on)(typ.) =5.0 W @VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
• Applications: Energy
• Voltage: 1500V
• Current: 4A