Description

• Parameters: 4A650V
• Description: SVF4N65RD/M/MJ/F/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. Download
• Features: 4A,650V, R DS(on)(typ.) =2.3 W @VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
• Applications: Energy, Motor Drive
• Voltage: 650V
• Current: 4A